FDU8874
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed.
Applications
- DC/DC converters
Features
- r DS(ON) = 5.1mΩ, VGS = 10V, ID = 35A
- r DS(ON) = 6.4mΩ, VGS = 4.5V, ID = 35A
- High performance trench technology for extremely low r DS(ON)
- Low gate charge
- High power and current handling capability
- Ro HS pliant
S DTO-P-2A5K2 (TO-252)
I-PAK (TO-251AA)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC = 25o C, VGS = 10V) (Note 1) Continuous (TC = 25o C, VGS = 4.5V) (Note 1) Continuous (Tamb = 25o C, VGS = 10V, with RθJA = 52o C/W) Pulsed
EAS PD TJ, TSTG
Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25o C Operating and Storage...
